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| BSP 170 P Preliminary data SIPMOS(R) Power Transistor * P-Channel * Enhancement mode * Avalanche rated * dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25C, unless otherwise specified Parameter Continuous drain current TA = 25 C TA = 70 C Pulsed drain current TA = 25 C Avalanche energy, single pulse ID = -1.9 A, VDD = -25 V, RGS = 25 Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.9 A, VDD V(BR)DSS, di/dt = 200 A/s, Tjmax = 150 C Gate source voltage Power dissipation TA = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg 20 1.8 -55 ... +150 -55...+150 55/150/56 V W C EAS IAR EAR dv/dt 70 -1.9 0.18 6 mJ A mJ kV/s IDpulse Symbol ID -1.9 -1.5 -7.6 Value Unit A Pin 2/4 D Pin 3 S Ordering Code Q67041-S4018 -1.9 A 0.3 Semiconductor Group 1 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4 ) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min. Values typ. max. tbd K/W Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 A Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 C VDS = -60 V, VGS = 0 V, Tj = 125 C Gate-source leakage current VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -10 V, ID = -1.9 A IGSS RDS(on) VGS(th) IDSS -0.1 -10 0.175 -1 -100 -100 0.3 nA -2.1 -3 -4 A V(BR)DSS 60 V 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = -1.9 A Input capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Rise time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Turn-off delay time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 Fall time VDD = -30 V, VGS = -10 V, ID = -1.9 A, RG = 6 tf 65 100 td(off) 125 190 tr 30 45 td(on) 14 21 ns Crss 65 85 gfs Ciss Coss Symbol min. 1 Values typ. 2.5 335 105 max. 420 135 S pF Unit Semiconductor Group 3 07 / 1998 BSP 170 P Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold VDD = -48 V, ID- 0,1 A, VGS = 0 to - 1 V Gate charge at Vgs=7V VDD = -24 V, ID = -1.9 A, VGS = 0 to-7 V Gate charge total VDD = -48 V, ID = -1.9 A, VGS = 0 to -10 V Gate plateau voltage VDD = -48 V, ID = -1.9 A V(plateau) 3.85 V Qg(7) Qg 7.8 10 11.7 15 nC QG(th) Symbol min. Values typ. 0.36 max. 0.54 nC Unit Reverse Diode Inverse diode continuous forward current T A = 25 C Inverse diode direct current,pulsed T A = 25 C Inverse diode forward voltage VGS = 0 V, IF = -3.8 A Reverse recovery time VR = -30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , di F/dt = 100 A/s trr Qrr 60 100 90 150 ns nC VSD -0.85 -1.2 V ISM -7.6 IS -1.9 A Semiconductor Group 4 07 / 1998 BSP 170 P Preliminary data Power Dissipation Ptot = f(TA) BSP 170 P Drain current ID = f (TA) parameter:VGS -10V BSP 170 P 1.8 W 2.0 A 1.6 Ptot 1.4 1.2 ID 1.4 1.2 1.0 1.0 0.8 0.8 0.6 0.4 0.2 0.0 0 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 20 40 60 80 100 120 C 160 TA TA Semiconductor Group 5 07 / 1998 BSP 170 P Preliminary data Typ. output characteristics I D = f (VDS) parameter: tp = 80 s BSP 170 P Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = -1.9 A, VGS = -10 V BSP 170 P -4.5 A Ptot = 2W j l k ihg f e d VGS [V] a b -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 -20.0 0.70 0.60 ID -3.5 c RDS(on) 0.55 0.50 0.45 0.40 0.35 0.30 0.25 typ 0.20 0.15 0.10 0.05 98% c d e -3.0 -2.5 b f g h i -2.0 -1.5 -1.0 -0.5 j a k l 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.00 -60 -20 20 60 100 C 160 VDS Tj Semiconductor Group 6 07 / 1998 BSP 170 P Preliminary data Gate threshold voltage Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 s VDS 2 x I D x R DS(on)max -10 A VGS(th) = f (Tj) parameter: V GS = VDS, ID = -460 A BSP 170 P -4.6 V -4.0 98% -8 VGS(th) -3.6 -3.2 typ ID -7 -2.8 -6 -2.4 -5 -4 -3 -2 -1 0.0 -60 0 0 -1 -2 -3 -4 -5 -6 -7 -8 V 2% -2.0 -1.6 -1.2 -0.8 -0.4 -20 20 60 100 C 150 160 -10 V GS Typ. capacitances C = f(V DS) Parameter: V GS=0 V, f=1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s BSP 170 P 10 1 A pF C Ciss IF 10 0 10 2 Coss Crss 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 - V DS VSD 7 07 / 1998 Semiconductor Group BSP 170 P Preliminary data Avalanche Energy E AS = f (Tj) parameter: ID = -1.9 A,VDD = -25 V RGS = 25 70 mJ V Typ. gate charge VGS = f (QGate) parameter: ID puls =-1.9A BSP 170 P 16 60 EAS 55 50 45 40 35 30 25 20 VGS 12 10 8 0,2 VDS max 6 0,8 VDS max 4 15 10 5 0 20 40 60 80 100 120 2 C Tj 150 0 0 2 4 6 8 10 14 nC QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP 170 P 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07 / 1998 BSP 170 P Preliminary data Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the Semiconductor Group 9 07 / 1998 |
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